j304/305 vishay siliconix document number: 70236 s-50077?rev. e, 24-jan-05 www.vishay.com 1 n-channel jfets product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j304 ? 2 to ? 6 ? 30 4.5 5 J305 ? 0.5 to ? 3 ? 30 3 1 features benefits applications excellent high frequency gain: j304, gps 11 db (typ) @ 400 mhz very low noise: 3.8 db (typ) @ 400 mhz very low distortion high ac/dc switch off-isolation high gain: a v = 60 @ 100 a wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches description the j304/305 n-channel jfets provide high-performance amplification, especially at high-frequency. these products are available in tape and reel for automated assembly (see package information). for similar products in to-236 (sot-23) packages, see the 2n/sst5484 series data sheet, or in to-206af (to-72) packages, see the 2n/sst4416 series data sheet. s d g to-226aa (to-92) top view 1 2 3 absolute maximum ratings gate-source/gate-drain voltage ? 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward gate current 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction t emperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead tem perature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
j304/305 vishay siliconix www.vishay.com 2 document number: 70236 s-50077?rev. e, 24-jan-05 specifications (t a = 25 c unless otherwise noted) limits j304 J305 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 30 ? 30 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 1 na ? 2 ? 6 ? 0.5 ? 3 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 5 15 1 8 ma gate reverse current i gss v gs = ? 20 v, v ds = 0 v ? 2 ? 100 ? 100 pa gate reverse current i gss t a = 100 c ? 0.2 na gate operating current b i g v dg = 10 v, i d = 1 ma ? 20 pa drain cutoff current i d(off) v ds = 10 v, v gs = ? 6 v 2 p a drain-source on-resistance r ds(on) v gs = 0 v, i d = 300 a 200 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward t ransconductance g fs v ds = 15 v v gs = 0 v f = 1 khz 4.5 7.5 3 ms common-source output conductance g os v ds = 15 v, v gs = 0 v, f = 1 khz 50 50 s common-source input capacitance c iss 2.2 common-source reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v f = 1 mhz 0.7 pf common-source output capacitance c oss f = 1 mh z 1 p equivalent input noise voltage e n v ds = 10 v, v gs = 0 v f = 100 hz 10 nv ? hz typical high-frequency specifications (t a = 25 c unless otherwise noted) limits (typ) j304 J305 parameter symbol test conditions 100 mhz 400 mhz 100 mhz 400 mhz unit high-frequency common-source input conductance g iss v ds = 15 v, v gs = 0 v 80 800 80 s common-source input susceptance b iss 2 7.5 2 ms common-source output conductance g oss v ds = 15 v v gs = 0 v 60 80 60 s common-source output susceptance b oss v ds = 15 v, v gs = 0 v 0.8 3.6 0.8 ms common-source forward transconductance g fs 4.4 4.2 3 ms common-source power gain g ps v ds = 15 v, i d = 5 ma 20 11 db noise figure nf r g = 1 k 1.7 3.8 db notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nh b. pulse test: pw 300 s, duty cycle 2%. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
j304/305 vishay siliconix document number: 70236 s-50077?rev. e, 24-jan-05 www.vishay.com 3 typical characteristics (t a = 25 c unless otherwise noted) on-resistance and output conductance vs. gate-source cutoff voltage r ds @ i d = 300 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v f = 1 khz drain current and transconductance vs. gate-source cutoff voltage g fs i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) i d ? drain current (ma) v ds ? drain-source voltage (v) v ds ? drain-source voltage (v) gate leakage current 5 ma 0.1 ma i gss @ 25 c t a = 25 c t a = 125 c i gss @ 125 c output characteristics output characteristics common-source forward transconductance vs. drain current 0.1 1 10 10 8 0 v gs(off) = ? 3 v t a = ? 55 c 125 c ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.2 v ? 1.0 v v gs = 0 v ? 0.6 v ? 0.9 v ? 1.2 v ? 1.5 v ? 1.8 v v gs = 0 v ? 0.3 v 10 8 0 6 4 2 20 0 16 12 8 4 0 ? 10 ? 2 ? 4 ? 6 ? 8 50 40 0 30 20 10 500 0 400 300 200 100 0 ? 10 ? 2 ? 4 ? 6 ? 8 012 8 41620 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 100 na 6 4 2 10 0 8 6 4 2 010 24 68 15 0 12 9 6 3 010 24 68 v gs(off) ? gate-source cutoff voltage (v) v ds = 10 v f = 1 khz v gs(off) = ? 2 v v gs(off) = ? 3 v i dss r ds g os 1 ma 0.1 ma 5 ma 1 ma 25 c s) g os ? output conductance ( ? 1.4 v i dss ? saturation drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current (ma) i g ? gate leakage (a) g fs ? forward transconductance ( s)
j304/305 vishay siliconix www.vishay.com 4 document number: 70236 s-50077?rev. e, 24-jan-05 typical characteristics (t a = 25 c unless otherwise noted) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) transfer characteristics transfer characteristics v gs ? gate-source voltage (v) transconductance vs. gate-source voltage v gs ? gate-source voltage (v) transconductance vs. gate-source voltgage i d ? drain current (ma) i d ? drain current (ma) on-resistance vs. drain current circuit voltage gain vs. drain current 0.1 1 10 10 0.1 a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d 10 0 8 6 4 2 0 ? 2 ? 0.4 ? 0.8 ? 1.2 ? 1.6 300 0 240 180 120 60 10 0 8 6 4 2 0 ? 3 ? 0.6 ? 1.2 ? 1.8 ? 2.4 10 0 8 6 4 2 0 ? 2 ? 0.4 ? 0.8 ? 1.2 ? 1.6 10 0 8 6 4 2 0 ? 3 ? 0.6 ? 1.2 ? 1.8 ? 2.4 100 0 80 60 40 20 v gs(off) = ? 2 v t a = ? 55 c 125 c v ds = 10 v t a = ? 55 c 125 c v gs(off) = ? 3 v v ds = 10 v t a = ? 55 c 125 c v gs(off) = ? 3 v v ds = 10 v f = 1 khz v gs(off ) = ? 2 v t a = ? 55 c 125 c v ds = 10 v f = 1 khz t a = 25 c v gs(off) = ? 3 v v gs(off) = ? 2 v v gs(off) = ? 2 v v gs(off) = ? 3 v 1 25 c 25 c 25 c 25 c g fs ? forward transconductance ( ms) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) i d ? drain current (ma) i d ? drain current (ma) a v ? voltage gain
j304/305 vishay siliconix document number: 70236 s-50077?rev. e, 24-jan-05 www.vishay.com 5 typical characteristics (t a = 25 c unless otherwise noted) common-source input capacitance vs. gate-source voltage common-source reverse feedback capacitance vs. gate-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) reverse admittance output admittance input admittance forward admittance 100 10 1 0.1 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source (ms) 100 10 1 0.1 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source (ms) 10 1 0.1 0.01 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source 10 1 0.1 0.01 100 1000 t a = 25 c v ds = 15 v v gs = 0 v common source f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) f ? frequency (mhz) 5 0 4 3 2 1 0 ? 20 ? 4 ? 8 ? 12 ? 16 3 0 2.4 1.8 1.2 0.6 0 ? 20 ? 4 ? 8 ? 12 ? 16 200 500 200 500 200 500 200 500 (ms) (ms) f = 1 mhz v ds = 0 v v ds = 10 v v ds = 0 v v ds = 10 v f = 1 mhz b is g is ? b fs g fs ? b rs ? g rs b os g os c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
j304/305 vishay siliconix www.vishay.com 6 document number: 70236 s-50077?rev. e, 24-jan-05 typical characteristics (t a = 25 c unless otherwise noted) 20 0 16 12 8 4 equivalent input noise voltage vs. frequency output conductance vs. drain current 10 100 k 10 k 0.1 1 10 i d ? drain current (ma) f ? frequency (hz) 20 0 16 12 8 4 100 1 k v ds = 10 v i d = 5 ma v gs = 0 v t a = ? 55 c 125 c v gs(off) = ? 3 v v ds = 10 v f = 1 khz 25 c e n ? noise voltage nv / hz g os ? output conductance ( s) vishay siliconix maintains worldw ide manufacturing capability. pr oducts may be manufactured at on e of several q ualified locati ons. reliability data fo r silicon te chnology and package reliability represent a co mposite of all qualifie d locations. for relate d documents such as pa ckage/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?70236 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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